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GA50JT06-258 - Junction Transistor

Key Features

  • 225°C maximum operating temperature.
  • Gate Oxide Free SiC Switch.
  • Exceptional Safe Operating Area.
  • Excellent Gain Linearity.
  • Compatible with 5 V TTL Gate Drive.
  • Temperature Independent Switching Performance.
  • Low Output Capacitance.
  • Positive Temperature Coefficient of RDS,ON.
  • Suitable for Connecting an Anti-parallel Diode Advantages.
  • Compatible with Si MOSFET/IGBT Gate Drive ICs.
  • > 20 µs Short-Circuit Withstand Capability.
  • Lowest-in-clas.

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Datasheet Details

Part number GA50JT06-258
Manufacturer GeneSiC
File Size 2.02 MB
Description Junction Transistor
Datasheet download datasheet GA50JT06-258 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GA50JT06-258 Normally – OFF Silicon Carbide Junction Transistor Features  225°C maximum operating temperature  Gate Oxide Free SiC Switch  Exceptional Safe Operating Area  Excellent Gain Linearity  Compatible with 5 V TTL Gate Drive  Temperature Independent Switching Performance  Low Output Capacitance  Positive Temperature Coefficient of RDS,ON  Suitable for Connecting an Anti-parallel Diode Advantages  Compatible with Si MOSFET/IGBT Gate Drive ICs  > 20 µs Short-Circuit Withstand Capability  Lowest-in-class Conduction Losses  High Circuit Efficiency  Minimal Input Signal Distortion  High Amplifier Bandwidth Package D TO-258 VDS RDS(ON) ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 600 V 25 mΩ 100 A 105 D G S D G S Applications  Down Hole Oil Drilling  Geothermal Instr