Datasheet4U.com

GA50JT17-CAL - Junction Transistor

Product Overview

GeneSiC

📥 Download Datasheet

GA50JT17-CAL Junction Transistor by GeneSiC - Datasheet Preview — Datasheet preview – GA50JT17-CAL

Datasheet Details

Part number	GA50JT17-CAL
Manufacturer	GeneSiC
File Size	2.03 MB
Description	Junction Transistor
Datasheet	GA50JT17-CAL Datasheet
Additional preview pages of the GA50JT17-CAL datasheet.

Product details

Features

210 °C Maximum Operating Temperature.
Gate Oxide Free SiC Switch.
Exceptional Safe Operating Area.
Excellent Gain Linearity.
Temperature Independent Switching Performance.
Low Output Capacitance.
Positive Temperature Coefficient of RDS,ON.
Suitable for Connecting an Anti-parallel Diode VDS = 1700 V RDS(ON) = 20 mΩ ID @ 25 oC = 100 A hFE = 85 Die Size = 4.35 mm x 4.35 mm Advantages.
Compatible with Si MOSFET/IGBT Gate Drive ICs.
> 20 µs Sh.

📁 Similar Datasheet

GA500TD60U - HALF-BRIDGE IGBT DUAL INT-A-PAK (International Rectifier)
GA50K6A1A - THERMISTORS (TE)
GA50K6A1B - THERMISTORS (TE)
GA50K6A1C - THERMISTORS (TE)
GA50K6A1D - THERMISTORS (TE)
GA50TS120K - Short Circuit Rated Ultra-FastTM Speed IGBT (XIAN)
GA50TS120U - HALF-BRIDGE IGBT INT-A-PAK (International Rectifier)
GA5210PH - GA5210PH High-Pressure Process (ETC)

Other Datasheets by GeneSiC

GA50JT17-247 - Junction Transistor
GA50JT12-247 - Normally - OFF Silicon Carbide Junction Transistor
GA50JT12-CAL - Junction Transistor
GA50JT06-258 - Junction Transistor
GA50JT06-CAL - OFF Silicon Carbide Junction Transistor
GA50SICP12-227 - Silicon Carbide Junction Transistor/Schottky Diode Co-pack

Published: Apr 14, 2017 |