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GB01SLT12-220 Datasheet Silicon Carbide Schottky Diode

Manufacturer: GeneSiC

Overview: GB01SLT12-220 Silicon Carbide Power Schottky Diode.

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Datasheet Details

Part number GB01SLT12-220
Manufacturer GeneSiC
File Size 380.39 KB
Description Silicon Carbide Schottky Diode
Download GB01SLT12-220 Download (PDF)

Key Features

  • 1200 V Schottky rectifier.
  • 175 °C maximum operating temperature.
  • Zero reverse recovery charge.
  • Positive temperature coefficient of VF.
  • Extremely fast switching speeds.
  • Temperature independent switching behavior.
  • Lowest figure of merit QC/IF Package.
  • RoHS Compliant VRRM I F QC Case PIN 1 1 2 PIN 2 TO.
  • 220AC = 1200 V = 1A = 4 nC CASE Advantages.
  • Improved circuit efficiency (Lower overall cost).

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