GB01SLT12-220 Description
GB01SLT12-220 Silicon Carbide Power Schottky Diode.
GB01SLT12-220 Key Features
- 1200 V Schottky rectifier -175 °C maximum operating temperature -Zero reverse recovery charge -Positive temperature
- Extremely fast switching speeds
- Temperature independent switching behavior
- Lowest figure of merit QC/IF
- RoHS pliant
- Improved circuit efficiency (Lower overall cost) -Low switching losses
- Ease of paralleling devices without thermal runaway -Smaller heat sink requirements -Industry's lowest reverse recove