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GB02SHT01-46 Datasheet High Temperature Silicon Carbide Power Schottky Diode

Manufacturer: GeneSiC

Overview:   High Temperature Silicon Carbide Power Schottky Diode.

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Datasheet Details

Part number GB02SHT01-46
Manufacturer GeneSiC
File Size 371.92 KB
Description High Temperature Silicon Carbide Power Schottky Diode
Download GB02SHT01-46 Download (PDF)

Key Features

  • 100 V Schottky rectifier.
  • 210 °C maximum operating temperature.
  • Zero reverse recovery charge.
  • Superior surge current capability.
  • Positive temperature coefficient of VF.
  • Temperature independent switching behavior.
  • Lowest figure of merit QC/IF.
  • Available screened to Mil-PRF-19500 Package.
  • RoHS Compliant GB02SHT01-46  VRRM IF (Tc=25°C) QC = 100 V = 4A = 9 nC 2 1 TO.
  • 46 Advantages.
  • High temperature operation.
  • Improved circuit ef.

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