GB02SHT01-46 Description
High Temperature Silicon Carbide Power Schottky Diode.
GB02SHT01-46 Key Features
- 100 V Schottky rectifier
- 210 °C maximum operating temperature
- Zero reverse recovery charge
- Superior surge current capability
- Positive temperature coefficient of VF
- Temperature independent switching behavior
- Lowest figure of merit QC/IF
- Available screened to Mil-PRF-19500
- RoHS pliant
- High temperature operation