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GB20SLT12-247 Datasheet Silicon Carbide Schottky Diode

Manufacturer: GeneSiC

Overview: GB20SLT12-247 1200V 20A SiC Schottky MPS™ Diode Silicon Carbide Schottky.

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Datasheet Details

Part number GB20SLT12-247
Manufacturer GeneSiC
File Size 310.92 KB
Description Silicon Carbide Schottky Diode
Download GB20SLT12-247 Download (PDF)

Key Features

  • High Avalanche (UIS) Capability.
  • Enhanced Surge Current Capability.
  • Superior Figure of Merit QC/IF.
  • Low Thermal Resistance.
  • 175 °C Maximum Operating Temperature.
  • Temperature Independent Switching Behavior.
  • Positive Temperature Coefficient of VF.
  • Extremely Fast Switching Speeds VRRM IF (Tc = 135°C) QC Package Case Case K A K TO-247-2 A = 1200 V = 32 A = 47 nC Advantages.
  • Low Standby Power Losses.
  • Imp.

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