MBR300200CT - Silicon Power Schottky Diode

This page provides the datasheet information for the MBR300200CT, a member of the MBR300150CT Silicon Power Schottky Diode family.

Product Overview

GeneSiC

Part number	MBR300200CT
Manufacturer	GeneSiC
File Size	696.80 KB
Description	Silicon Power Schottky Diode
Datasheet	MBR300200CT Datasheet
Additional preview pages of the MBR300200CT datasheet.

High Surge Capability.
Types from 150 V to 200 V VRRM.
Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 t.

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Other Datasheets by GeneSiC

Published: Jun 27, 2019 |