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MBR6080R - Silicon Power Schottky Diode

Download the MBR6080R datasheet PDF. This datasheet also covers the MBR6045 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 45 V to 100 V VRRM.
  • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6045 thru MBR60100R VRRM = 45 V - 100 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R) Unit Repetitive peak reverse voltage RMS reverse voltag.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBR6045-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBR6080R
Manufacturer GeneSiC
File Size 723.75 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBR6080R Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base. MBR6045 thru MBR60100R VRRM = 45 V - 100 V IF = 60 A DO-5 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR6045 (R) MBR6060 (R) MBR6080 (R) MBR60100 (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 100 °C TC = 25 °C, tp = 8.