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MBRF200150 - Silicon Power Schottky Diode

GeneSiC

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Datasheet Details

Part number	MBRF200150
Manufacturer	GeneSiC
File Size	470.84 KB
Description	Silicon Power Schottky Diode
Datasheet	MBRF200150-GeneSiC.pdf

MBRF200150 Product details

Features

High Surge Capability.
Types from 150 V to 200 V VRRM.
Not ESD Sensitive MBRF200150 thru MBRF200200R VRRM = 150 V - 200 V IF(AV) = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF200150(R) MBRF200200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150.

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Published: Mar 5, 2016 |