MBRF200150R, MBRF200150 - Silicon Power Schottky Diode

GeneSiC

Datasheet Details

Part number	MBRF200150R, MBRF200150
Manufacturer	GeneSiC
File Size	470.84 KB
Description	Silicon Power Schottky Diode
Datasheet	MBRF200150-GeneSiC.pdf
Note	This datasheet PDF includes multiple part numbers: MBRF200150R, MBRF200150. Please refer to the document for exact specifications by model.

High Surge Capability.
Types from 150 V to 200 V VRRM.
Not ESD Sensitive MBRF200150 thru MBRF200200R VRRM = 150 V - 200 V IF(AV) = 200 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF200150(R) MBRF200200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150.

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Published: Mar 5, 2016 |