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MBRF300150 - Silicon Power Schottky Diode

Key Features

  • High Surge Capability.
  • Types from 150 V to 200 V VRRM.
  • Not ESD Sensitive MBRF300150 thru MBRF300200R VRRM = 150 V - 200 V IF(AV) = 300 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF300150(R) MBRF300200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150.

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Datasheet Details

Part number MBRF300150
Manufacturer GeneSiC
File Size 472.05 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRF300150 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBRF300150 thru MBRF300200R VRRM = 150 V - 200 V IF(AV) = 300 A TO-244AB Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRF300150(R) MBRF300200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRF300150(R) Average forward current (per pkg) Peak forward surge current (per leg) Maximum forward voltage (per leg) Reverse current a