MBRT20060 - (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
This page provides the datasheet information for the MBRT20060, a member of the MBRT20045 (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode family.
Additional preview pages of the MBRT20060 datasheet.
MBRT20060 Product details
Features
High Surge Capability.
Types up to 100 V VRRM.
Isolation Type Package Three Tower Package
VRRM = 20 V - 100 V IF = 200 A
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter Repetitive p p peak reverse voltage g RMS reverse voltage DC blocking voltage Continuous forward current Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature Symbol VRRM VRMS VDC IF IF,SM Tj Tstg TC ≤ 125.
📁 Similar Datasheet
MBRT20060 - Silicon Power Schottky Diode(America Semiconductor)
MBRT20060R - Silicon Power Schottky Diode(America Semiconductor)
MBRT200100 - Silicon Power Schottky Diode(America Semiconductor)
MBRT200100R - Silicon Power Schottky Diode(America Semiconductor)
MBRT20020 - Silicon Power Schottky Diode(America Semiconductor)
MBRT20020R - Silicon Power Schottky Diode(America Semiconductor)
MBRT20030 - Silicon Power Schottky Diode(America Semiconductor)
MBRT20030R - Silicon Power Schottky Diode(America Semiconductor)
MBRT20035 - Silicon Power Schottky Diode(America Semiconductor)
MBRT20035R - Silicon Power Schottky Diode(America Semiconductor)
Other Datasheets by GeneSiC
MBRT20060R- (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT200100- (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT200100R- (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20045- (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20045R- (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20080- (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20080R- (MBRT20045 - MBRT200100R) Silicon Power Schottky Diode
MBRT20060 Datasheet
