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MBRT30035 - Silicon Power Schottky Diode

Download the MBRT30035 datasheet PDF. This datasheet also covers the MBRT30020 variant, as both devices belong to the same silicon power schottky diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types from 20 V to 40 V VRRM.
  • Isolation Type Package.
  • Electrically Isolated Base Plate.
  • Not ESD Sensitive MBRT30020 thru MBRT30040R VRRM = 20 V - 40 V IF(AV) = 300 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT30020(R) MBRT30030(R) MBRT30035(R) MBRT30040(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC block.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MBRT30020-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MBRT30035
Manufacturer GeneSiC
File Size 463.41 KB
Description Silicon Power Schottky Diode
Datasheet download datasheet MBRT30035 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Power Schottky Diode Features • High Surge Capability • Types from 20 V to 40 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT30020 thru MBRT30040R VRRM = 20 V - 40 V IF(AV) = 300 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT30020(R) MBRT30030(R) MBRT30035(R) MBRT30040(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 20 14 20 -55 to 150 -55 to 150 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter S