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MUR40060CT - Silicon Super Fast Recovery Diode

Download the MUR40060CT datasheet PDF (MUR40040CT included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for silicon super fast recovery diode.

Features

  • High Surge Capability.
  • Types up to 600 V VRRM MUR40040CT thru MUR40060CTR VRRM = 50 V - 600 V IF = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT (R) MUR40060CT (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 280 400 400 600 420 600 400 Surge non-repetitive forward curr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MUR40040CT-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MUR40060CT
Manufacturer GeneSiC
File Size 687.15 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MUR40060CT Datasheet
Other Datasheets by GeneSiC

Full PDF Text Transcription

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Silicon Super Fast Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM MUR40040CT thru MUR40060CTR VRRM = 50 V - 600 V IF = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT (R) MUR40060CT (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 280 400 400 600 420 600 400 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.
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