• Part: MUR40060CT
  • Description: Silicon Super Fast Recovery Diode
  • Category: Diode
  • Manufacturer: GeneSiC
  • Size: 687.15 KB
Download MUR40060CT Datasheet PDF
GeneSiC
MUR40060CT
Features - High Surge Capability - Types up to 600 V VRRM MUR40040CT thru MUR40060CTR VRRM = 50 V - 600 V IF = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT (R) MUR40060CT (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC TC ≤ 125 °C 280 400 420 600 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.3 ms Tj Tstg -40 to 175 -40 to 175 -40 to 175 -40 to 175 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Diode forward voltage Reverse current Recovery Time Maximum reverse recovery time Thermal characteristics Thermal resistance,...