Download the MUR40060CTR datasheet PDF.
This datasheet also covers the MUR40040CT variant, as both devices belong to the same silicon super fast recovery diode family and are provided as variant models within a single manufacturer datasheet.
Key Features
High Surge Capability.
Types from 400 to 600 V VRRM.
Not ESD Sensitive
MUR40040CT thru MUR40060CTR
VRRM = 400 V - 600 V IF(AV) = 400 A
Twin Tower Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
MUR40040CT(R)
MUR40060CT(R)
Repetitive peak reverse voltage
RMS reverse voltage DC blocking voltage Operating temperature Storage temperature
VRRM
VRMS VDC Tj Tstg
400
280 400 -55 to 150.
Full PDF Text Transcription for MUR40060CTR (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MUR40060CTR. For precise diagrams, and layout, please refer to the original PDF.
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 400 to 600 V VRRM • Not ESD Sensitive MUR40040CT thru MUR40060CTR VRRM = 400 V - 600 V IF(...
View more extracted text
Not ESD Sensitive MUR40040CT thru MUR40060CTR VRRM = 400 V - 600 V IF(AV) = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT(R) MUR40060CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 400 280 400 -55 to 150 -55 to 150 600 420 600 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MUR40040CT(R) MUR40060CT(R) Average forward current (per pkg) Peak forward sur
MUR40060CTR Datasheet
