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MUR40060CT - Silicon Super Fast Recovery Diode

Download the MUR40060CT datasheet PDF. This datasheet also covers the MUR40040CT variant, as both devices belong to the same silicon super fast recovery diode family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Surge Capability.
  • Types up to 600 V VRRM MUR40040CT thru MUR40060CTR VRRM = 50 V - 600 V IF = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT (R) MUR40060CT (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 280 400 400 600 420 600 400 Surge non-repetitive forward curr.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MUR40040CT-GeneSiC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MUR40060CT
Manufacturer GeneSiC
File Size 687.15 KB
Description Silicon Super Fast Recovery Diode
Datasheet download datasheet MUR40060CT Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types up to 600 V VRRM MUR40040CT thru MUR40060CTR VRRM = 50 V - 600 V IF = 400 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR40040CT (R) MUR40060CT (R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Continuous forward current VRRM VRMS VDC IF TC ≤ 125 °C 400 280 400 400 600 420 600 400 Surge non-repetitive forward current, Half Sine Wave Operating temperature Storage temperature IF,SM TC = 25 °C, tp = 8.