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General Semiconductor

BAT86 Datasheet Preview

BAT86 Datasheet

Schottky Diodes

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BAT86
Schottky Diodes
NEW PRODUCT
DO-35
max. .079 (2.0)
Cathode
Mark
max. .020 (0.52)
Dimensions in inches and (millimeters)
FEATURES
For general purpose applications.
This diode features low turn-on volt-
age. The devices are protected by a PN
junction guard ring against excessive volt-
age, such as electrostatic discharges.
Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
applications.
This diode is also available in the Mini-MELF case
with the type designation BAS86.
MECHANICAL DATA
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Min.
Max.
Continuous Reverse Voltage
Forward Continuous Current at Tamb = 25 °C
Repetitive Forward Current
at tp < 1 s, υ ≤ 0.5, Tamb = 25 °C
Power Dissipation at Tamb = 25 °C
Junction Temperature
VR
IF
IFRM
Ptot
Tj
50
2001)
5001)
2001)
125
Ambient Operating Temperature Range
Tamb
–65
+125
Storage Temperature Range
TS –65
+150
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
Unit
V
mA
mA
mW
°C
°C
°C
5/98
222




General Semiconductor

BAT86 Datasheet Preview

BAT86 Datasheet

Schottky Diodes

No Preview Available !

BAT86
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Forward Voltage
Pulse Test tp < 300 µs, δ < 2%
at IF = 0.1 mA
at IF = 1 mA
at IF = 10 mA
at IF = 30 mA
at IF = 100 mA
VF
0.200
0.300
VF
0.275
0.380
VF
0.365
0.450
VF
0.460
0.600
VF
0.700
0.900
Leakage Current
at VR = 25 V
IR – 0.2 0.5
Reverse Breakdown Voltage
tested with 10 µA Pulses
V(BR)R
50
Capacitance
at VR = 1 V, f = 1 MHz
Thermal Resistance
Junction to Ambient Air
Ctot – – 8
RthJA
3001)
Reverse Recovery Time
from IF = 10 mA to IR = 10 mA to IR = 1 mA
trr
––5
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.
Unit
V
V
V
V
V
µA
V
pF
K/W
ns
223


Part Number BAT86
Description Schottky Diodes
Maker General Semiconductor
Total Page 2 Pages
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