max. ∅.079 (2.0)
max. ∅.020 (0.52)
Dimensions in inches and (millimeters)
♦ For general purpose applications.
♦ This diode features low turn-on volt-
age. The devices are protected by a PN
junction guard ring against excessive volt-
age, such as electrostatic discharges.
♦ Metal-on-silicon Schottky barrier device which is
protected by a PN junction guard ring. The low for-
ward voltage drop and fast switching make it ideal
for protection of MOS devices, steering, biasing and
coupling diodes for fast switching and low logic level
♦ This diode is also available in the Mini-MELF case
with the type designation BAS86.
Case: DO-35 Glass Case
Weight: approx. 0.13 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Continuous Reverse Voltage
Forward Continuous Current at Tamb = 25 °C
Repetitive Forward Current
at tp < 1 s, υ ≤ 0.5, Tamb = 25 °C
Power Dissipation at Tamb = 25 °C
Ambient Operating Temperature Range
Storage Temperature Range
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature.