Schottky Datasheet | Pinout, Features, Price Comparison & PDF

MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

Trench Schottky Barrier Rectifiers 30SQ050 R-6 Reverse Voltage - 50V Forward Current - 30A FEATURES The plastic package carries Underwriters Laborat

1N5817 THRU 1N5819 PLASTIC SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere FEATURES DO-41 Low switching noise Low forw

HRW0202B Silicon Schottky Barrier Diode for Rectifying ADE-208-345A (Z) Rev 1 Oct. 1997 Features • Low forward voltage drop and suitable for high eff

ESAD83-004 (30A) (40V / 30A ) SCHOTTKY BARRIER DIODE Features Low VF Super high speed switching High reliability by planer design Outline drawings,

www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

PMBR5H150SS \ SR5H15 ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS Voltage 150 V Current 5A Features  Plastic package has Underwriters Laboratory Fl

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

R SCHOTTKY BARRIER DIODE HBR2200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 2A 200 V 175 ℃ 0.72V （@Tj=125℃）  、  APPLICATIONS

® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 150A Peak  Low Power

SEMICONDUCTOR TECHNICAL DATA MBRD5U100D SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATUR

R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

® WON-TOP ELECTRONICS SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

® WON-TOP ELECTRONICS SR5150 – SR5200 5.0A HIGH VOLTAGE SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Constru

N 2CZ10150 A9 ○R 2CZ10150 A9 ， 。 、 、。 ●150℃ ● ● ● ● VRRM IF（AV） VF（MAX） 150 2×5 0.90 V A V -10℃～40℃ 1 ＜85％ 265℃ （Per Di

www.eicsemi.com SB220 - SB2B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 2.0 Amperes DO-15 FEATURES : * High current capability

www.DataSheet4U.com Final data Silicon Carbide Schottky Diode • Worlds first 600V Schottky diode • Revolutionary semiconductor material - Silicon Car