900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






General Semiconductor

BAV102 Datasheet Preview

BAV102 Datasheet

Small Signal Diodes

No Preview Available !

BAV100 THRU BAV103
Small Signal Diodes
MiniMELF
Cathode Mark
.142 (3.6)
.134 (3.4)
.019 (0.48)
.011 (0.28)
FEATURES
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other
case styles including: the DO-35 case with
the type designations BAV19 to BAV21, the SOD-123
case with the type designations BAV19W to BAV21W,
and the SOT-23 case with the type designation
BAS19 - BAS21.
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Reverse Voltage
BAV100
BAV101
BAV102
BAV103
VR
VR
VR
VR
Forward DC Current at Tamb = 25 °C
IF
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f 50 Hz
I0
Repetitive Peak Forward Current
at f 50 Hz, Θ = 180 °C, Tamb = 25 °C
Surge Forward Current at t < 1 s, Tj = 25 °C
IFRM
IFSM
Power Dissipation at Tamb = 25 °C
Ptot
Junction Temperature
Tj
Storage Temperature Range
TS
1) Valid provided that electrodes are kept at ambient temperature.
Value
60
120
200
250
2501)
2001)
6251)
1
4001)
175
–65 to +175
Unit
V
V
V
V
mA
mA
mA
A
mW
°C
°C
4/98




General Semiconductor

BAV102 Datasheet Preview

BAV102 Datasheet

Small Signal Diodes

No Preview Available !

BAV100 THRU BAV103
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Forward voltage at IF = 100 mA
VF – – 1 V
Leakage Current
at VR = 50 V
at VR = 50 V, Tj = 100 °C
at VR = 100 V
at VR = 100 V, Tj = 100 °C
at VR = 150 V
at VR = 150 V, Tj = 100 °C
at VR = 200 V
at VR = 200 V, Tj = 100 °C
BAV100
BAV100
BAV101
BAV101
BAV102
BAV102
BAV103
BAV103
IR
IR
IR
IR
IR
IR
IR
IR
– – 100 nA
– – 15 µA
– – 100 nA
– – 15 µA
– – 100 nA
– – 15 µA
– – 100 nA
– – 15 µA
Dynamic Forward Resistance
at IF = 10 mA
Capacitance
at VR = 0, f = 1 MHz
Reverse Recovery Time
from IF = 30 mA through IR = 30 mA to
IR = 3 mA; RL = 100
Thermal Resistance
Junction to Ambient Air
rf
Ctot
trr
RthJA
5–
1.5 –
– 50
pF
ns
0.3751)
K/mW
1) Valid provided that electrodes are kept at ambient temperature.


Part Number BAV102
Description Small Signal Diodes
Maker General Semiconductor
Total Page 4 Pages
PDF Download

BAV102 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BAV10 High-speed diode
NXP
2 BAV100 General purpose diodes
NXP
3 BAV100 Silicon Epitaxial Planar Diodes
Vishay Telefunken
4 BAV100 Small Signal Diodes
General Semiconductor
5 BAV100 Ultrafast Switching Surface Mount Si-Rectifiers
Diotec Semiconductor
6 BAV100 Small Signal Diodes
Kingtronics
7 BAV100 Silicon Epitaxial Planar Diodes
SURGE
8 BAV100 Hermetically Sealed Glass High Voltage Switching Diodes
Taiwan Semiconductor
9 BAV100 Small Signal Diodes
MCC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy