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GFB60N03 Datasheet N-Channel MOSFET

Manufacturer: General Semiconductor (now Vishay)

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Overview

GFB60N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® TO-263AB VDS 30V RDS(ON) 11mΩ ID 60A New Product G D 0.380 (9.65) 0.420 (10.67) 0.21 (5.33) Min.

D 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) S 0.42 (10.66) 0.320 (8.13) 0.360 (9.14) PIN GDS Seating Plate -T- 0.096 (2.43) 0.102 (2.59) 0.027 (0.686) 0.037 (0.940) 0.575 (14.60) 0.625 (15.88) 0.120 (3.05) 0.155 (3.94) 0.055 (1.39) 0.066 (1.68) Dimensions in inches and (millimeters) 0.014 (0.35) 0.020 (0.51) 0.100 (2.54) 0.130 (3.30) 0.63 (17.02) 0.33 (8.38) Mounting Pad Layout 0.08 (2.032) 0.24 (6.096) 0.12 (3.05) Mechanical Data Case: JEDEC TO-263 molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Mounting Position: Any Weight: 1.

Key Features

  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Swit.

More Datasheets from General Semiconductor (now Vishay)

Part Number Description
GFB75N03 N-Channel Enhancement-Mode MOSFET