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GFP50N03 Datasheet – N-Channel Enhancement-Mode MOSFET

Manufacturer: General Semiconductor (now Vishay)

Overview

GFP50N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® VDS 30V RDS(ON) 13mΩ ID 50A D TO-220AB 0.415 (10.54) Max.

0.154 (3.91) 0.142 (3.60)Dia.

0.113 (2.87) * 0.102 (2.56) 0.155 (3.93) D 0.134 (3.40) 0.410 (10.41) 0.350 (8.89) PIN G DS 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.

Key Features

  • S.
  • Advanced Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.205 (5.20) 0.190 (4.83) 0.105 (2.67) 0.095 (2.41).
  • May be notched or flat 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method.