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GFP70N03 - N-Channel Enhancement-Mode MOSFET

Key Features

  • Advanced Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Switching for High Efficiency 0.410 (10.41) 0.350 (8.89) G PIN D S 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) Mechanical Data Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds, 0.17” (4.3mm) from case Mou.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com GFP70N03 N-Channel Enhancement-Mode MOSFET TO-220AB 0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56) D H C N E ET R T ENF G VDS 30V RDS(ON) 8mΩ ID 70A D ® 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) G S * 0.155 (3.93) 0.134 (3.40) 0.603 (15.32) 0.573 (14.55) 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.104 (2.64) 0.094 (2.39) Features • Advanced Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency 0.410 (10.41) 0.350 (8.89) G PIN D S 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.