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GFP50N03 - N-Channel Enhancement-Mode MOSFET

Key Features

  • S.
  • Advanced Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.205 (5.20) 0.190 (4.83) 0.105 (2.67) 0.095 (2.41).
  • May be notched or flat 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method.

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Other Datasheets by General Semiconductor (now Vishay)

Part Number Description
GFP60N03 N-Channel Enhancement-Mode MOSFET
GFP70N03 N-Channel Enhancement-Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GFP50N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® VDS 30V RDS(ON) 13mΩ ID 50A D TO-220AB 0.415 (10.54) Max. 0.154 (3.91) 0.142 (3.60)Dia. 0.113 (2.87) * 0.102 (2.56) 0.155 (3.93) D 0.134 (3.40) 0.410 (10.41) 0.350 (8.89) PIN G DS 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39) G Features S • Advanced Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.205 (5.20) 0.190 (4.83) 0.105 (2.67) 0.095 (2.