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GFP50N03 - N-Channel Enhancement-Mode MOSFET

Datasheet Summary

Features

  • S.
  • Advanced Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Low Voltage DC/DC Converters.
  • Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.205 (5.20) 0.190 (4.83) 0.105 (2.67) 0.095 (2.41).
  • May be notched or flat 0.022 (0.56) 0.014 (0.36) Dimensions in inches and (millimeters) Case: JEDEC TO-220AB molded plastic body Terminals: Leads solderable per MIL-STD-750, Method.

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Datasheet Details

Part number GFP50N03
Manufacturer General Semiconductor
File Size 110.05 KB
Description N-Channel Enhancement-Mode MOSFET
Datasheet download datasheet GFP50N03 Datasheet
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Full PDF Text Transcription

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GFP50N03 N-Channel Enhancement-Mode MOSFET TGREENNCFHET® VDS 30V RDS(ON) 13mΩ ID 50A D TO-220AB 0.415 (10.54) Max. 0.154 (3.91) 0.142 (3.60)Dia. 0.113 (2.87) * 0.102 (2.56) 0.155 (3.93) D 0.134 (3.40) 0.410 (10.41) 0.350 (8.89) PIN G DS 0.635 (16.13) 0.580 (14.73) 0.360 (9.14) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.09 (2.28) 0.560 (14.22) 0.530 (13.46) 0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14) 0.603 (15.32) 0.573 (14.55) 0.104 (2.64) 0.094 (2.39) G Features S • Advanced Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Low Voltage DC/DC Converters • Fast Switching for High Efficiency Mechanical Data 0.037 (0.94) 0.026 (0.66) 0.205 (5.20) 0.190 (4.83) 0.105 (2.67) 0.095 (2.
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