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MCIRF7N60 - POWER MOSFET

Key Features

  • The MCIRF7N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical.

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Datasheet Details

Part number MCIRF7N60
Manufacturer Global Semiconductor
File Size 586.75 KB
Description POWER MOSFET
Datasheet download datasheet MCIRF7N60 Datasheet

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MFIRF7N60 MCIRF7N60 POWER MOSFET ID = 7.0A VDS = 600V RDS(on)MAX = 1.2Ω Description/ Features The MCIRF7N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery protection. 150℃ Tj operation ● Low Power Loss & Low cost ●Fast Switching ●RoHS Compliant ● Major Ratings and Characteristics Characteristics ID IDM VDS VGS TJ T storage Values 7.0 28.