Datasheet4U Logo Datasheet4U.com

MCIRF10N65 Datasheet Power MOSFET

Manufacturer: Global Semiconductor

Overview: MFIRF10N65 MCIRF10N65 ID = 10A VDS = 650V RDS(on)MAX = 0.8Ω Major Ratings and Characteristics Characteristics Values Units ID 10 A IDM 40 A VDS 650 V VGS TJ T storage ±30 150 -55 ~150 V ℃ ℃ POWER.

General Description

/

Key Features

  • The MFIRF10N65 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. The new energy efficient design also offers a drainto-source diode with a fast recovery time. Typical.

More Datasheets from Global Semiconductor

Part Number Description
MCIRF13N50 POWER MOSFET
MCIRF2N65 POWER MOSFET
MCIRF4N65 POWER MOSFET
MCIRF7N60 POWER MOSFET
MCIRF7N65 POWER MOSFET

MCIRF10N65 Distributor