GSM02N15 Overview
Description
Drain Drain Gate Source Drain Drain GSM02N15.
Key Features
- 150V,1.4A, RDS(ON) =480mΩ@VGS = 10V
- Improved dv/dt capability
- TSOP-6 package design
| Part | GSM02N15 |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Globaltech |
| Size | 466.34 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |