GPT09N50D Features
* This high voltage MOSFET uses an advanced termination
* Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability
* Avalanche Energy Specified without degrading performance over time. In addition, this
* Source-to-Drain Diode Recovery Time Comparable to a
Datasheet Details
GPT09N50D, GPT09N50
Greatpower
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Power field effect transistor.
This datasheet PDF includes multiple part numbers: GPT09N50D, GPT09N50.
Please refer to the document for exact specifications by model.
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