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GPT09N50 GPT09N50D
POWER FIELD EFFECT TRANSISTOR
GENERAL DESCRIPTION
FEATURES
This high voltage MOSFET uses an advanced termination Robust High Voltage Termination
scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified
without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a
advanced MOSFET is designed to withstand high energy in
Discrete Fast Recovery Diode
avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits
efficient design also offers a drain-to-source diode with a IDSS and VDS(on) Specified at Elevated Temperature
fast recovery time.
GPT09N50 Datasheet
