GPT09N50 Overview
FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time parable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and mutation modes. The new...
GPT09N50 Key Features
- Robust High Voltage Termination
- Avalanche Energy Specified
- Source-to-Drain Diode Recovery Time parable to a
- Diode is Characterized for Use in Bridge Circuits
- IDSS and VDS(on) Specified at Elevated Temperature