GPT09N50D - POWER FIELD EFFECT TRANSISTOR

Product Overview

Part number	GPT09N50D
Manufacturer	Greatpower
File Size	292.77 KB
Description	POWER FIELD EFFECT TRANSISTOR
Datasheet	GPT09N50D Datasheet
Note	This datasheet PDF includes multiple part numbers: GPT09N50D, GPT09N50. Please refer to the document for exact specifications by model.
Additional preview pages of the GPT09N50D datasheet.

This high voltage MOSFET uses an advanced termination.
Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability.
Avalanche Energy Specified without degrading performance over time. In addition, this.
Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy.
Diode is Characterized for Use in Bridge Circuits efficie.

📁 Similar Datasheet

Other Datasheets by Greatpower

Published: Nov 8, 2017 |