GPT13N50CD Features
* This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFE
GPT13N50CD, GPT13N50C Datasheet
Datasheet Details
GPT13N50CD, GPT13N50C
Greatpower
727.12 KB
Power field effect transistor.
This datasheet PDF includes multiple part numbers: GPT13N50CD, GPT13N50C.
Please refer to the document for exact specifications by model.
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GPT13N50CD Distributor
