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2SK3480 - MOSFET

Features

  • Super low on-state resistance: RDS(on)1 = 31 m RDS(on)2 = 36 m MAX. (VGS = 10 V, ID = 25A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 25 A) Low Ciss: Ciss = 3600 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temper.

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Datasheet Details

Part number 2SK3480
Manufacturer Guangdong Kexin Industrial
File Size 64.08 KB
Description MOSFET
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Full PDF Text Transcription

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SMD Type MOS Field Effect Transistor 2SK3480 TO-263 +0.1 1.27-0.1 www.DataSheet4U.com MOSFET Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Features Super low on-state resistance: RDS(on)1 = 31 m RDS(on)2 = 36 m MAX. (VGS = 10 V, ID = 25A) +0.2 8.7-0.2 MAX. (VGS = 4.5 V, ID = 25 A) Low Ciss: Ciss = 3600 pF TYP. Built-in gate protection diode +0.1 1.27-0.1 0.1max +0.1 0.81-0.1 +0.2 5.28-0.2 2.54 5.08 +0.1 -0.1 +0.2 2.54-0.2 +0.2 15.25-0.2 +0.2 2.54-0.2 +0.2 0.4-0.2 Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 100 20 50 100 84 1.
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