Datasheet4U Logo Datasheet4U.com

2SK3481 - N-Channel MOSFET Transistor

General Description

and solenoid drive.

Key Features

  • Drain Current : ID= 30A@ TC=25℃.
  • Drain Source Voltage : VDSS= 100V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) @ VGS= 10V.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3481 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK3481 MOS Field Effect Transistor Kexin
2SK3480 SWITCHING N-CHANNEL POWER MOSFET NEC
2SK3480 MOS Field Effect Transistor Kexin
2SK3480-Z N-Channel 100V MOSFET VBsemi

Other Datasheets by Inchange Semiconductor

Part Number Description
2SK3481-S N-Channel MOSFET Transistor
2SK3481-Z N-Channel MOSFET Transistor
2SK3481-ZJ N-Channel MOSFET Transistor
2SK3480 N-Channel MOSFET Transistor
2SK3480-S N-Channel MOSFET Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor 2SK3481 FEATURES ·Drain Current : ID= 30A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 50mΩ(Max) @ VGS= 10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pluse 60 A PD Total Dissipation @TC=25℃ 56 W TJ Max.