Datasheet4U Logo Datasheet4U.com

K3484 - 2SK3484

Description

The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A).
  • Low Ciss: Ciss = 900 pF TYP.
  • Built-in gate protection diode.
  • TO-251/TO-252 package (TO-251).

📥 Download Datasheet

Datasheet preview – K3484

Datasheet Details

Part number K3484
Manufacturer NEC
File Size 164.03 KB
Description 2SK3484
Datasheet download datasheet K3484 Datasheet
Additional preview pages of the K3484 datasheet.

📁 Similar Datasheet

  • K3480 - N-Channel MOSFET (VBsemi)
  • K3403 - 2SK3403 (Toshiba Semiconductor)
  • K3407 - 2SK3407 (Toshiba)
  • K3413-01 - Two-color detector (Hamamatsu)
  • K3413-02 - Two-color detector (Hamamatsu)
  • K3413-05 - Two-color detector (Hamamatsu)
  • K3413-08 - Two-color detector (Hamamatsu)
  • K3413-09 - Two-color detector (Hamamatsu)
  • K3417 - 2SK3417 (Toshiba Semiconductor)
  • K3418 - Silicon N-Channel MOSFET (Renesas)
Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3484 SWITCHING N-CHANNEL POWER MOS FET www.DataSheet4U.com DESCRIPTION The 2SK3484 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SK3484 2SK3484-Z PACKAGE TO-251 (MP-3) TO-252 (MP-3Z) FEATURES • Low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 8 A) • Low Ciss: Ciss = 900 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package (TO-251) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg 100 ±20 ±16 ±22 30 1.
Published: |