Datasheet4U Logo Datasheet4U.com

2SK3482 - MOSFET

Features

  • Super low on-state resistance: RDS(on)1 = 33m RDS(on)2 = 39 m MAX. (VGS = 10 V, ID = 18A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 +0.15 0.50-0.15 Low Ciss: Ciss = 3600 pF TYP. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature.

📥 Download Datasheet

Datasheet preview – 2SK3482

Datasheet Details

Part number 2SK3482
Manufacturer Guangdong Kexin Industrial
File Size 65.27 KB
Description MOSFET
Datasheet download datasheet 2SK3482 Datasheet
Additional preview pages of the 2SK3482 datasheet.

📁 Similar Datasheet

  • 2SK3482 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3482 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK3482-Z - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3480 - SWITCHING N-CHANNEL POWER MOSFET (NEC)
  • 2SK3480 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3480-S - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3480-Z - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3480-Z - N-Channel 100V MOSFET (VBsemi)
  • 2SK3480-ZJ - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • 2SK3481 - N-Channel MOSFET Transistor (Inchange Semiconductor)
Other Datasheets by Guangdong Kexin Industrial

Full PDF Text Transcription

Click to expand full text
SMD Type MOS Field Effect Transistor 2SK3482 TO-252 www.DataSheet4U.com IC MOSFET Features Super low on-state resistance: RDS(on)1 = 33m RDS(on)2 = 39 m MAX. (VGS = 10 V, ID = 18A) +0.2 9.70-0.2 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 +0.1 0.80-0.1 +0.15 0.50-0.15 Low Ciss: Ciss = 3600 pF TYP. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 +0.15 5.55-0.15 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 100 20 36 100 50 1.
Published: |