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SMD Type
HEXFET Power MOSFET KRF7379
IC IC
Features
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 VGS dv/dt TJ, TSTG R
JA
Symbol VDS ID ID IDM
N-Channel 30 5.8 4.6 46 2.5 0.02 20 5.0
P-Channel -30 -4.3 -3.4 -34
Unit V
A
@Ta= 25
PD
W W/ V -5.0 V/ns
-55 to + 150 50 /W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 2.
KRF7379 Datasheet
