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SMD Type
HEXFET Power MOSFET KRF7338
IC IC
Features
Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Continuous Drain Current ,VGS@10V , Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 Junction-to-Drain Lead VGS TJ, TSTG R R
JA JL
Symbol VDS ID ID IDM
N-Channel 12 6.3 5.2 26 2.0 1.3 16 12 *4
P-Channel -12 -3.0 -2.5 -13
Unit V
A
@Ta= 25 @Ta= 70
*3 *3
PD
W mV/ 8.0 V
-55 to + 150 62.5 20 /W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 Pulse width 400 s; duty cycle 2%.
KRF7338 Datasheet
