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SMD Type
HEXFET Power MOSFET KRF7343
IC IC
Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Fully Avalanche Rated
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Continuous Drain Current,VGS@10V , Ta = 25 Continuous Drain Current ,VGS@10V , Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy *3 Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *5 @Ta= 25 @Ta= 70 *5 *5 VGS EAS IAR EAR dv/dt TJ, TSTG R
JA
Symbol VDS ID ID IDM PD
N-Channel 55 4.7 3.8 38 2.0 1.3 20 72 4.7 0.20 5.0
P-Channel -55 -3.4 -2.7 -27
Unit V
A
W V 114 -3.4 mJ A mJ -5.
KRF7343 Datasheet
