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SMD Type
HEXFET Power MOSFET KRF7389
IC IC
Features
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Avalanche Rated
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Continuous Drain Current Ta = 25 Continuous Drain Current Ta = 70 Pulsed Drain Current *1 Continuous Source Current (Diode Conduction) Power Dissipation @Ta= 25 @Ta= 70 Gate-to-Source Voltage Single Pulse Avalanche Energy VGS EAS IAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 EAR dv/dt TJ, TSTG R
JA
Symbol VDS ID ID IDM IS PD
N-Channel 30 7.3 5.9 30 2.5 2.5 1.6 20 82 4.0 0.20 3.8
P-Channel -30 -5.3 -4.2 -30 -2.5
Unit V
A
W V 140 -2.8 mJ A mJ -2.
KRF7389 Datasheet
