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SMD Type
HEXFET Power MOSFET KRF7501
IC IC
Features
Generation V Technology Ulrtra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Continuous Drain Current, VGS @ 10V,Ta = 25 Continuous Drain Current, VGS @ 10V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Gate-to-Source Voltage Single Pulse tp 10 s Gate-to-Source Voltage Peak Diode Recovery dv/dt*1 Junction and Storage Temperature Range Junction-to-Ambient *2 * ISD 1.7A, di/dt 66A/ s, VDD V(BR)DSS,TJ 10sec. 150 VGSM VGS dv/dt TJ, TSTG R JA *1 *1 Symbol VDS ID ID IDM PD PD Rating 20 2.4 1.9 19 1.25 0.8 0.
KRF7501 Datasheet
