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KRF7104 - HEXFET Power MOSFET

Datasheet Summary

Features

  • Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current.
  • 1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt.
  • 3 Junction and Storag.

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Datasheet Details

Part number KRF7104
Manufacturer Guangdong Kexin Industrial
File Size 70.69 KB
Description HEXFET Power MOSFET
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SMD Type HEXFET Power MOSFET KRF7104 IC IC Features Adavanced Process Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching 1: Source 1 2: Gate 1 7,8: Drain 1 3: Source 2 4: Gate 2 5,6: Drain 2 Absolute Maximum Ratings Ta = 25 Parameter Continuous Drain Current, VGS @ 10V @ Ta = 25 Continuous Drain Current, VGS @ 10V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS dv/dt TJ, TSTG R JA Symbol ID ID IDM @TC= 25 PD Rating -2.3 -1.8 -10 2.0 0.016 12 -3 -55 to + 150 62.5 Unit A W W/ V V/nS /W *1 Repetitive rating; pulse width limited by max.
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