Click to expand full text
SMD Type
HEXFET Power MOSFET KRF7105
Features
Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching
IC IC
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current VGS @ 10V Ta = 25 Continuous Drain Current VGS @ 10V Ta = 70 Pulsed Drain Current *1 Power Dissipation Linear Derating Factor Peak Diode Recovery dv/dt *2 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient*3 dv/dt VGS TJ, TSTG R
JA
Symbol ID ID IDM
N-Channel 3.5 2.8 14 2.0 0.016 3.0 20
P-Channel -2.3 -1.8 -10
Unit
A
@Tc= 25
PD
W W/ -3.0 V/ ns V
-55 to + 150 62.5 /W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 N-Channel ISD P-Channel ISD 3.
KRF7105 Datasheet
