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SMD Type
HEXFET Power MOSFET KRF7506
Features
Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Fast Switching
IC IC
Absolute Maximum Ratings Ta = 25
Parameter Continuous Drain Current, VGS @ -10V @ TA = 25 Continuous Drain Current, VGS @ -10V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS dv/dt TJ, TSTG R
JA
Symbol ID ID IDM @TA= 25 PD
Rating -1.7 -1.4 -9.6 1.25 10 20 5.0 -55 to + 150 100
Unit
A
W m W/ V V/ns
/W
*1 Repetitive rating; pulse width limited by max. junction temperature. *2 Surface mounted on FR-4 board, t *3 ISD -1.
KRF7506 Datasheet
