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SMD Type
HEXFET Power MOSFET KRF7507
Features
Generation V Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Very Small SOIC Package Low Profile (<1.1mm) Available in Tape & Reel Fast Switching
IC IC
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Continuous Drain Current VGS Ta = 25 Continuous Drain Current VGS Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10 S Peak Diode Recovery dv/dt *2 Junction and Storage Temperature Range Maximum Junction-to-Ambient*3 VGS VGSM dv/dt TJ, TSTG R
JA
Symbol VDS ID ID IDM
N-Channel 20 2.4 1.9 21 1.25 0.8 10 12 16 5.0
P-Channel -20 -1.7 -1.4 -14
Unit V
A
@Ta= 25 @Ta= 70
PD
W mW/ V V -5.
KRF7507 Datasheet
