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SMD Type
HEXFET Power MOSFET KRF7530
IC IC
Features
Trench Technology Ultra Low On-Resistance Dual N-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel
Absolute Maximum Ratings Ta = 25
Parameter Drain- Source Voltage Continuous Drain Current, VGS @ 4.5V,Ta = 25 Continuous Drain Current, VGS @ 4.5V,TA = 70 Pulsed Drain Current*1 Power Dissipation Ta = 25 Power Dissipation Ta = 70 Linear Derating Factor Single Pulse Avalanche Energy *2 Gate-to-Source Voltage Junction and Storage Temperature Range Junction-to-Ambient *1 1* Surface mounted on FR-4 board, t 10sec. EAS VGS TJ, TSTG R JA Symbol VDS ID ID IDM PD PD Rating 20 5.4 4.3 40 1.3 0.8 10 33 12 -55 to + 150 100 /W mW/ mJ V W A Unit A
*2 Starting TJ = 25 , L = 2.6mH,RG = 25 , IAS = 5.0A.
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KRF7530 Datasheet
