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KRF7555 - HEXFET Power MOSFET

Features

  • Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V @ TA = 25 Continuous Drain Current, VGS @ -4.5V @ TA = 70 Pulsed Drain Current.
  • 1 Power Dissipation.
  • 2 Power Dissipation.
  • 2 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy.
  • 2 Peak Diode Recovery dv/dt.
  • 3 Junction and.

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Datasheet preview – KRF7555

Datasheet Details

Part number KRF7555
Manufacturer Guangdong Kexin Industrial
File Size 81.20 KB
Description HEXFET Power MOSFET
Datasheet download datasheet KRF7555 Datasheet
Additional preview pages of the KRF7555 datasheet.

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Full PDF Text Transcription

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SMD Type HEXFET Power MOSFET KRF7555 IC IC Features Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile ( 1.1mm) Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Continuous Drain Current, VGS @ -4.5V @ TA = 25 Continuous Drain Current, VGS @ -4.5V @ TA = 70 Pulsed Drain Current *1 Power Dissipation *2 Power Dissipation *2 Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy*2 Peak Diode Recovery dv/dt *3 Junction and Storage Temperature Range Maximum Junction-to-Ambient *2 VGS EAS dv/dt TJ, TSTG R JA Symbol VDS ID ID IDM @TA= 25 @TA= 70 PD Rating -20 -4.3 -3.4 -34 1.25 0.8 10 12 36 1.
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