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HM2300B - N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

The HM2300B by H&M Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

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HM2300B N-Channel Enhancement Mode Power MOSFET by H&M Semiconductor - Datasheet Preview — Official preview page of the HM2300B N-Channel Enhancement Mode Power MOSFET datasheet (H&M Semiconductor).

Datasheet Details

Part number	HM2300B
Manufacturer	H&M Semiconductor
File Size	390.87 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	HM2300B-HMSemiconductor.pdf
Additional preview pages of the HM2300B datasheet.

HM2300B Product details

Description

The HM2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

Features

VDS = 20V,ID = 4.5A RDS(ON) < 40mΩ @ VGS=2.5V RDS(ON) < 33mΩ @ VGS=4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram 2300 Marking and pin assignment.

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Other Datasheets by H&M Semiconductor

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Published: Nov 27, 2018 |