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HM2301B - P-Channel Trench Power MOSFET

H&M Semiconductor

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Datasheet Details

Part number	HM2301B
Manufacturer	H&M Semiconductor
File Size	803.79 KB
Description	P-Channel Trench Power MOSFET
Datasheet	HM2301B-HMSemiconductor.pdf

HM2301B Product details

Description

The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

Features

VDS = -20V,ID = -2.5A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package D G S Schematic diagram A1SHB Marking and pin assignment.

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Published: Jan 2, 2017 |