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HM2301 - P-Channel Enhancement Mode Power MOSFET

General Description

The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = 3.4A RDS(ON) < 67mΩ @ VGS=-2.5V RDS(ON) < 51mΩ @ VGS=-4.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package D G S Schematic diagram 016M Marking and pin Assignment.

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HM2301 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -20V,ID = 3.4A RDS(ON) < 67mΩ @ VGS=-2.5V RDS(ON) < 51mΩ @ VGS=-4.