Description
The HM2302DR is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
Power Management in Note book
Portable Equipment
Battery Powered System
Load Switch
Features
- ES.
- RDS(ON)= 270 mΩ @VGS=4.5V.
- RDS(ON)= 330 mΩ @VGS=2.5V.
- RDS(ON)= 450 mΩ @VGS=1.8V.
- Super high density cell design for extremely low RDS(ON).
- Exceptional on-resistance and maximum DC current
capability.
- Capable doing Cu wire bonding
Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted)
Parameter Drain-Source Voltage Gate-Source Voltage
Symbol VDS VGS
Maximum Ratings
20 ±8
Unit V V.
- Th
Nov, 2013-Ver1.0
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Abs.
HM2302DR-HMSemiconductor.pdf
