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HM2302B - N-Channel Trench Power MOSFET

General Description

The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a battery protection or in other switching application.

Key Features

  • VDS = 20V,ID =2.5A RDS(ON) < 60mΩ @ VGS =4.5V RDS(ON) < 90mΩ @ VGS =2.5V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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N-Channel Trench Power MOSFET General Description The HM2302B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features ● VDS = 20V,ID =2.5A RDS(ON) < 60mΩ @ VGS =4.5V RDS(ON) < 90mΩ @ VGS =2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Battery protection ● Load switch ● Power management HM2302B Schematic Diagram SOT-23 top view Package Marking and Ordering Information Device Marking Device Device Package A2sHB HM2302B SOT-23 Reel Size Ø180mm Table 1.