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HM3400C - N-Channel Enhancement Mode Power MOSFET

General Description

The +0& uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.5V RDS(ON).

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+0& N-Channel Enhancement Mode Power MOSFET Description The +0& uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = 30V,ID = 3.6A RDS(ON) < 73mΩ @ VGS=4.